| Obligation |
: |
Elective |
| Prerequisite courses |
: |
- |
| Concurrent courses |
: |
- |
| Delivery modes |
: |
Face-to-face |
| Learning and teaching strategies |
: |
Lecture, Discussion, Question and Answer, Project Design/Management |
| Course objective |
: |
The aim of this course is to teach the design, fabrication and effective use of micro and nano scale solid state devices. |
| Learning outcomes |
: |
1. Knows the materials used in electronics and optoelectronics effectively; 2. Have knowledge about quantum physics and its use in electronics; 3. Can design micro and nanoscale semiconductor devices; 4. Understand the operating mechanisms of different types of diodes and transistors and realize their effective use; 5. Have knowledge to understand and interpret the developments in micro and nanoelectronics industries |
| Course content |
: |
Materials in Electronics; Overview of Quantum Physics; pn and Metal-Semiconductor Junctions; Field Effect Transistors (FET) and Metal Oxide Semiconductor Field Effect Transistors (MOSFET); High Electron Mobility Transistors; High Frequency and High Power Transistors; Optoelectronic Devices |
| References |
: |
Streetman B.G. and Banerjee S.K., Solid State Electronics, 7th Ed., Pearson, 2016; Waser. R. Ed.,Nanoelectronics and Information Technology: Advanced Electronics Materials and Novel Devices, 3rd Ed., Wiley-VCH,2012; Sze S.M., Lee M.-K., Semiconductor Devices: Physics and Technology, 3rd Ed, Wiley, 2012 |
Course Outline Weekly
| Weeks |
Topics |
| 1 |
Introduction to Micro and Nano Scale Electronics Devices |
| 2 |
Materials Science in Electronics |
| 3 |
Semiconductor Manufacturing Technologies |
| 4 |
Overview of Quantum Physics I: Principles of Probability and Uncertainty |
| 5 |
Overview of Quantum Physics II: Energy Bands and Charge Carriers |
| 6 |
P-N and Metal-Semiconductor Junctions |
| 7 |
Schottky, Tunneling, Varactor and Power Diodes |
| 8 |
FET, MESFET and MOSFET Transistors |
| 9 |
Midterm |
| 10 |
Advanced MOSFET Transistors and Integrated Circuit Applications |
| 11 |
High Electron Mobility Transitors (HEMT) |
| 12 |
Bipolar Junction (BJT) and Hetero-Bipolar Junction Transistor (HBT) |
| 13 |
Carbon Nanotube and Graphene Based Electronic Devices |
| 14 |
Optoelectronic Devices |
| 15 |
Final Exam Preparation |
| 16 |
Final Exam |
Matrix Of The Course Learning Outcomes Versus Program Outcomes
| Key learning outcomes |
Contribution level |
| 1 |
2 |
3 |
4 |
5 |
| 1. |
Has general and detailed knowledge in certain areas of Electrical and Electronics Engineering in addition to the required fundamental knowledge. | | | | | |
| 2. |
Solves complex engineering problems which require high level of analysis and synthesis skills using theoretical and experimental knowledge in mathematics, sciences and Electrical and Electronics Engineering. | | | | | |
| 3. |
Follows and interprets scientific literature and uses them efficiently for the solution of engineering problems. | | | | | |
| 4. |
Designs and runs research projects, analyzes and interprets the results. | | | | | |
| 5. |
Designs, plans, and manages high level research projects; leads multidiciplinary projects. | | | | | |
| 6. |
Produces novel solutions for problems. | | | | | |
| 7. |
Can analyze and interpret complex or missing data and use this skill in multidiciplinary projects. | | | | | |
| 8. |
Follows technological developments, improves him/herself , easily adapts to new conditions. | | | | | |
| 9. |
Is aware of ethical, social and environmental impacts of his/her work. | | | | | |
| 10. |
Can present his/her ideas and works in written and oral form effectively; uses English effectively. | | | | | |
